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RF1010 Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() Onlinecomponents.com | RF1010PE005 | Hubbell Premise Wiring | LINKOSITY FEM RECEP 10A, 10W, 5FT RoHS : Compliant |
| 0 | |
| RF1010PE010 | Hubbell Premise Wiring | LINKOSITY FEM. RCPT. 10A, 10P, 10' RoHS : Compliant |
| 0 | ||
| RF1010PE025 | Hubbell Premise Wiring | LINKOSITY RECEP 10A, 10W RoHS : Compliant |
| 0 | ||
![]() Avnet Americas | IRF1010EPBF | Infineon Technologies AG | - Rail/Tube (Alt: IRF1010EPBF) RoHS : Compliant |
| 660 | |
| MBRF10100CT-M3/4W | Vishay Intertechnologies | - Rail/Tube (Alt: MBRF10100CT-M3/4W) RoHS : Compliant |
| 0 | ||
| IRF1010NSTRLPBF | Infineon Technologies AG | - Tape and Reel (Alt: IRF1010NSTRLPBF) RoHS : Compliant | 0 | |||
| MBRF10100 | Taiwan Semiconductor | Diode Schottky 100V 10A 2-Pin ITO-220AC Tube - Rail/Tube (Alt: MBRF10100) RoHS : Compliant |
| 0 | ||
| SRF10100 | Taiwan Semiconductor | Diode Schottky 100V 10A 3-Pin ITO-220AB Tube - Rail/Tube (Alt: SRF10100) RoHS : Compliant |
| 0 | ||
| SRF1010DA-100M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-100M) RoHS : Compliant |
| 0 | ||
| MLRF1010-560KS | Gowanda Electronics Corporation | - Tape and Reel (Alt: MLRF1010-560KS) RoHS : Not Compliant |
| 0 | ||
| SRF10100H | Taiwan Semiconductor | 10A, 100V, SCHOTTKY RECTIFIER - Rail/Tube (Alt: SRF10100H) RoHS : Compliant |
| 0 | ||
| VRF-10-10-50-00-N | Molex | Connector, Receptacle, 100 Contacts, 10 Rows, 1.27 mm, Gold, Beryllium Copper, Through Hole, Gray - Bulk (Alt: VRF-10-10-50-00-N) RoHS : Not Compliant |
| 0 | ||
| MBRF10100H | Taiwan Semiconductor | Diode Schottky 100V 10A 2-Pin ITO-220AC Tube - Rail/Tube (Alt: MBRF10100H) RoHS : Compliant |
| 0 | ||
| MBRF10100CT-Y | Taiwan Semiconductor | Diode Schottky 100V 10A 3-Pin ITO-220AB Tube - Rail/Tube (Alt: MBRF10100CT-Y) RoHS : Compliant |
| 0 | ||
| IRF1010EZPBF | Infineon Technologies AG | Trans MOSFET N-CH 60V 84A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRF1010EZPBF) RoHS : Compliant | 0 | |||
| MBRF10100CTH | Taiwan Semiconductor | 10A, 100V, SCHOTTKY RECTIFIER - Rail/Tube (Alt: MBRF10100CTH) RoHS : Compliant |
| 0 | ||
| MBRF10100CT | Taiwan Semiconductor | Diode Schottky 100V 10A 3-Pin ITO-220AB Tube - Rail/Tube (Alt: MBRF10100CT) RoHS : Compliant |
| 0 | ||
| MBRF10100CT | Diodes Incorporated | - Rail/Tube (Alt: MBRF10100CT) RoHS : Compliant | 0 | |||
![]() Mouser Electronics | MBRF10100CTL | Littelfuse Inc | Schottky Diodes & Rectifiers 2x 5A 100V Rectifier RoHS : Compliant |
| 19,327 | |
| BMRF00101040220MA1 | Pulse Electronics Corporation | Power Inductors - SMD Closed Magnetic Circuit Type Molding Processing & for Ultra High Current RoHS : Compliant |
| 3,980 | ||
| BMRF00101040R47MD1 | Pulse Electronics Corporation | Power Inductors - SMD .47uH RDC=1.2mOhms 33A RoHS : Compliant |
| 2,154 | ||
| BMRF001010401R0MD1 | Pulse Electronics Corporation | Power Inductors - SMD Closed Magnetic Circuit Type Molding Processing & for Ultra High Current RoHS : Compliant |
| 2,018 | ||
| SRF10100 C0 | Taiwan Semiconductor | Schottky Diodes & Rectifiers 10A 100V Schottky Re ctifier RoHS : Compliant |
| 1,841 | ||
| IRF1010EPBF | Infineon Technologies AG | MOSFETs MOSFT 60V 81A 12mOhm 86.6nC RoHS : Compliant |
| 1,705 | ||
| IRF1010NSTRLPBF | Infineon Technologies AG | MOSFETs MOSFT 55V 84A 11mOhm 80nC RoHS : Compliant |
| 1,192 | ||
| MBRF10100CT-E3/4W | Vishay Intertechnologies | Schottky Diodes & Rectifiers 100 Volt 10A Single TrenchMOS RoHS : Compliant |
| 1,055 | ||
| MBRF10100-M3/4W | Vishay Intertechnologies | Schottky Diodes & Rectifiers 10A,100V,TRENCH SKY RECT. RoHS : Compliant |
| 994 | ||
| BMRF001010401R5MD1 | Pulse Electronics Corporation | Power Inductors - SMD Chilisin Power - Inductor (IND) Closed Magnetic Circuit TypeMolding Processing & for Ultra High Current RoHS : Compliant |
| 976 | ||
| BMRF00101040100MA1 | Pulse Electronics Corporation | Power Inductors - SMD 10uH RoHS : Compliant |
| 937 | ||
| MBRF10100-E3/4W | Vishay Intertechnologies | Schottky Diodes & Rectifiers 10 Amp 100 Volt 150 Amp IFSM RoHS : Compliant |
| 795 | ||
| BMRF001010403R3MA1 | Pulse Electronics Corporation | Power Inductors - SMD 3.3uH RDC=13.2mOhms 11A RoHS : Compliant |
| 499 | ||
| SRF1010DA-R43M | Bourns Inc | Coupled Inductors 0.43uH 20% 27A AEC-Q200 RoHS : Compliant |
| 172 | ||
| MBRF10100 | Taiwan Semiconductor | Schottky Diodes & Rectifiers 10A, 100V, Schottky Rectifier RoHS : Compliant |
| 0 | ||
![]() Newark | IRF1010NSTRLPBF | Infineon Technologies AG | Mosfet; Transistor Polarity:N Channel; D |Infineon Technologies IRF1010NSTRLPBF RoHS : Compliant |
| 798 | |
| IRF1010NSTRLPBF | Infineon Technologies AG | Mosfet; Transistor Polarity:N Channel; D |Infineon Technologies IRF1010NSTRLPBF RoHS : Compliant |
| 798 | ||
| IRF1010EPBF | Infineon Technologies AG | Mosfet, N, 60V, 81A, To-220; |Infineon Technologies IRF1010EPBF RoHS : Compliant |
| 312 | ||
| MBRF10100CTR | Littelfuse Inc | Schottky Rect, 100V, 10A, Ito-220Ab; |Littelfuse MBRF10100CTR RoHS : Compliant |
| 206 | ||
| IRF1010EZPBF | Infineon Technologies AG | Mosfet, N, 60V, 84A, To-220; Available Until Stocks Are Exhausted Alternative Available |Infineon Technologies IRF1010EZPBF RoHS : Compliant |
| 119 | ||
| IRF1010ZSTRLPBF | Infineon Technologies AG | Mosfet, N-Ch, 55V, 75A, To-263; Available Until Stocks Are Exhausted Alternative Available |Infineon Technologies IRF1010ZSTRLPBF RoHS : Compliant |
| 71 | ||
| IRF1010ZSTRLPBF | Infineon Technologies AG | Mosfet, N-Ch, 55V, 75A, To-263; Available Until Stocks Are Exhausted Alternative Available |Infineon Technologies IRF1010ZSTRLPBF RoHS : Compliant |
| 71 | ||
| RF1010PE025 | Hubbell Wiring Device-Kellems | Linkosity Recep 10A, 10W; |Hubbell Wiring Devices RF1010PE025 RoHS : Not Compliant |
| 0 | ||
| RF1010PE010 | Hubbell Wiring Device-Kellems | Linkosity Fem Rcpt, 10A, 10P, 10; |Hubbell Wiring Devices RF1010PE010 RoHS : Not Compliant |
| 0 | ||
| RF1010PE005 | Hubbell Wiring Device-Kellems | Linkosity Fem Recep 10A, 10W, 5Ft; |Hubbell Wiring Devices RF1010PE005 RoHS : Not Compliant |
| 0 | ||
| IRF1010EPBF. | Infineon Technologies AG | Pwr Mosfet, N Channel, 60V, 84A; |Infineon Technologies IRF1010EPBF. RoHS : Compliant |
| 0 | ||
| SRF1010DA-7R5M | Bourns Inc | Inductor, Aec-Q200, Shielded, 7.5Uh, 20%; |Bourns, Inc. SRF1010DA-7R5M RoHS : Compliant |
| 0 | ||
| SRF1010DA-7R5M | Bourns Inc | Inductor, Aec-Q200, Shielded, 7.5Uh, 20%; |Bourns, Inc. SRF1010DA-7R5M RoHS : Compliant |
| 0 | ||
| MBRF10100-M3/4W | Vishay Intertechnologies | 10A,100V, trench Sky Rect.; |Vishay MBRF10100-M3/4W RoHS : Not Compliant |
| 0 | ||
| MBRF10100-E3/4W | Vishay Intertechnologies | Schottky Rectifier, 10A, 100V, Ito-220Ac; Repetitive Peak Reverse Voltage:100V; Average Forward Current:10A; Diode Configuration:Single; Diode Case Style:Ito-220Ac; No. Of Pins:2Pins; Forward Voltage Max:800Mv; Qualification:- Rohs Compliant: Yes RoHS : Compliant |
| 0 | ||
![]() RS | IRF1010EPBF | Infineon Technologies AG | MOSFET, POWER, N-CH, VDSS 60V, RDS(ON) 12 MILLIOHMS, ID 84A, TO-220AB, PD 200W, GFS 69S RoHS : Compliant |
| 13 | |
| AUIRF1010EZ | Infineon Technologies AG | AUIRF1010EZ N-CHANNEL MOSFET TRANSISTOR, 84 A, 60 V, 3-PIN TO-220AB RoHS : Compliant |
| 0 | ||
| RF1010PE025 | Hubbell Wiring Device-Kellems | LINKOSITY RECEP 10A, 10W |
| 0 | ||
| AUIRF1010ZS | Infineon Technologies AG | AUIRF1010ZS N-CHANNEL MOSFET TRANSISTOR, 94 A, 55 V, 4-PIN D2PAK RoHS : Compliant |
| 0 | ||
| IRF1010NPBF | Infineon Technologies AG | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 11 MILLIOHMS, ID 85A, TO-220AB, PD 180W, GFS 32S RoHS : Compliant |
| 0 | ||
| IRF1010NSPBF | Infineon Technologies AG | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 11 MILLIOHMS, ID 85A, D2PAK, PD 180W, VGS +/-20V RoHS : Compliant |
| 0 | ||
| MBRF10100CTR | Littelfuse Inc | 100V 10A Schottky MBR series ITO-220AB RoHS : Compliant |
| 0 | ||
| IRF1010ZLPBF | Infineon Technologies AG | MOSFET, 55V, 94A, 7.5 MOHM, 63 NC QG, TO-262 RoHS : Compliant |
| 0 | ||
| IRF1010ESPBF | Infineon Technologies AG | MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK |
| 0 | ||
| SRF1010DA-100M | Bourns Inc | INDUCTOR: 12X9.6X11.3MM,10UH,20%,5.6A, SHD, SMD RoHS : Compliant |
| 0 | ||
| SRF1010DA-150M | Bourns Inc | INDUCTOR; 12X9.6X11.3MM,15UH,20%,4.6A, SHD, SMD RoHS : Compliant |
| 0 | ||
| IRF1010NSTRLPBF | Infineon Technologies AG | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 11 MILLIOHMS, ID 85A, D2PAK, PD 180W, VGS +/-20V RoHS : Compliant |
| 0 | ||
| AUIRF1010EZSTRR | Infineon Technologies AG | AUTOMOTIVE MOSFET 60V, 84A, 8.5 MOHM, 58 NC QG, D2PAK RoHS : Compliant |
| 0 | ||
| IRF1010ESTRLPBF | Infineon Technologies AG | MOSFET, 60V, 83A, 12 MOHM, 86.6 NC QG, D2-PAK RoHS : Compliant |
| 0 | ||
| IRF1010NSTRRPBF | Infineon Technologies AG | MOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 11 MILLIOHMS, ID 85A, D2PAK, PD 180W, VGS +/-20V RoHS : Compliant |
| 0 | ||
![]() Rochester Electronics | IRF1010NSTRLPBF | Infineon Technologies AG | HEXFET Power MOSFET RoHS : Compliant |
| 633 | |
| IRF1010ZPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 13,400 | ||
| IRF1010NSTRRPBF | Infineon Technologies AG | IRF1010 - HEXFET Power MOSFET RoHS : Compliant |
| 667 | ||
| AUIRF1010EZS | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 34 | ||
| AUIRF1010ZL | Infineon Technologies AG | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 5,362 | ||
| IRF1010EPBF | Infineon Technologies AG | MOSFET P-Channel 55V 12A (Tc) TO-220-3 Tube RoHS : Compliant |
| 1,125 | ||
| AUIRF1010Z | Infineon Technologies AG | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 3,650 | ||
| IRF1010ESTRLPBF | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 97,205 | ||
AUIRF1010Z![]() | International Rectifier | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 12,418 | ||
AUIRF1010ZL![]() | International Rectifier | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 8,552 | ||
IRF1010ZPBF![]() | International Rectifier | Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 1,700 | ||
![]() Sager | RF1010PE025 | Hubbell Incorporated | LINKOSITY RECEP 10A, 10W |
| 0 | |
| RF1010PE010 | Hubbell Incorporated | LINKOSITY FEM RCPT, 10A, 10P, 10' |
| 0 | ||
| RF1010PE005 | Hubbell Incorporated | LINKOSITY FEM RECEP 10A, 10W, 5FT |
| 0 | ||
![]() TME | MBRF10100CTR | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V |
| 831 | |
| MBRF10100CT | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V |
| 796 | ||
| IRF1010NSTRLPBF | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 55V; 60A; 180W; D2PAK RoHS : Compliant |
| 274 | ||
| IRF1010EPBF | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 60V; 81A; 170W; TO220AB RoHS : Compliant |
| 33 | ||
| MBRF10100-E3/4W | Vishay Intertechnologies | Diode: Schottky rectifying; THT; 100V; 10A; ITO220AC; Ufmax: 800mV RoHS : Compliant |
| 0 | ||
| MBRF10100CTU | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.82V |
| 0 | ||
| MBRF10100 | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 10A; ITO220AC; Ufmax: 0.85V |
| 0 | ||
| MBRF10100CTL | Littelfuse Inc | Diode: Schottky rectifying; THT; 100V; 10A; ITO220AB; Ufmax: 850mV RoHS : Compliant |
| 0 | ||
| MBRF10100CTP | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V |
| 0 | ||
| MBRF10100CTR | Littelfuse Inc | Diode: Schottky rectifying; THT; 100V; 10A; ITO220AB; Ufmax: 850mV RoHS : Compliant |
| 0 | ||
| SBRF10100CT | SMC Diode Solutions | Diode: Schottky rectifying; THT; 100V; 5Ax2; ITO220AB; Ufmax: 0.85V |
| 0 | ||
![]() Ameya Holding Limited | IRF1010EPBF | Infineon Technologies AG | Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3 RoHS : Compliant | 2,100 | ||
![]() ComSIT USA | IRF1010EZSPBF | INTERNATIONAL RECTIFIER/INFINEON TECHNOLOGIES AG | AVAILABLE EU | 1,089 | ||
![]() ComSIT USA | IRF1010ESTRLPBF | International Rectifier | HEXFET Power MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 6,000 | ||
| AUIRF1010EZS | International Rectifier | HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 1,700 | |||
AUIRF1010ZS![]() | International Rectifier | HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 1,050 | |||
AUIRF1010Z![]() | International Rectifier | HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 600 | |||
| IRF1010NSTRLPBF | International Rectifier | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 465 | |||
AUIRF1010ZL![]() | International Rectifier | HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant | 450 | |||
| IRF1010S | International Rectifier | Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Not Compliant | 195 | |||
| IRF1010ESPBF | International Rectifier | HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 18 | |||
![]() NexGen Digital | IRF1010NSTRLPBF | Infineon Technologies AG | RoHS : Compliant | 895 | ||
![]() PEI Genesis | S5048FRF1010-34-5 | SOURIAU-SUNBANK |
| 0 | ||
| S5048FRF1010-34-7 | SOURIAU-SUNBANK |
| 0 | |||
![]() Rutronik | IRF1010EZPBF | Infineon Technologies AG | N-CH 60V 75A 8,5mOhm TO220-3 RoHS : Compliant |
| 150 | |
![]() Chip 1 Exchange | IRF1010NSTRLPBF | Infineon Technologies AG | INSTOCK RoHS : Compliant | 22,933 | ||
IRF1010EPBF![]() | International Rectifier | INSTOCK RoHS : Compliant | 21,795 | |||
IRF1010NS![]() | International Rectifier | INSTOCK RoHS : Not Compliant | 188 | |||
![]() Avnet Abacus | SRF1010DA-100M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-100M) RoHS : Compliant | 0 | ||
| SRF1010DA-150M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-150M) RoHS : Compliant | 0 | |||
| SRF1010DA-5R6M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-5R6M) RoHS : Compliant | 0 | |||
| SRF1010DA-R43M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-R43M) RoHS : Compliant | 0 | |||
| SRF1010DA-7R5M | Bourns Inc | - Tape and Reel (Alt: SRF1010DA-7R5M) RoHS : Compliant | 0 | |||
![]() Avnet Asia | MBRF10100CT-Y | Taiwan Semiconductor | Diode Schottky 100V 10A 3-Pin ITO-220AB Tube (Alt: MBRF10100CT-Y) RoHS : Compliant | 0 | ||
![]() Component Electronics, Inc | IRF1010EZSPBF![]() | International Rectifier | IN STOCK SHIP TODAY RoHS : Compliant |
| 7 | |
IRF1010EZPBF![]() | International Rectifier | IN STOCK SHIP TODAY RoHS : Compliant |
| 2 | ||
![]() EBV Elektronik | IRF1010EPBF | Infineon Technologies AG | Power MOSFET N Channel 60 V 81 A 0012 ohm TO220AB Through Hole (Alt: SP001569818) RoHS : Compliant | 0 | ||
| AUIRF1010ZSTRL | Infineon Technologies AG | (Alt: SP001519002) RoHS : Compliant | 0 | |||
| IRF1010NSTRLPBF | Infineon Technologies AG | Transistor MOSFET NCH 55V 85A 3Pin TO263AB TR (Alt: SP001571236) RoHS : Compliant | 0 | |||
| MBRF10100-E3/4W | Vishay Intertechnologies | 10A100VSINGLE SKY TECT (Alt: MBRF10100-E3/4W) RoHS : Compliant | 0 | |||
![]() Master Electronics | SRF1010DA-100M | Bourns Inc | ROHS3Compliant Wirewound Active e3 Fixed Inductor -55C~155C 12MHz 32.6mOhm Max 10muH RoHS : Compliant |
| 0 | |
| SRF1010DA-150M | Bourns Inc | ROHS3Compliant Wirewound Active e3 fixed air core inductor -55C~155C 10MHz 45.5mOhm Max 15muH RoHS : Compliant |
| 0 | ||
| SRF1010DA-5R6M | Bourns Inc | ROHS3Compliant Wirewound Active e3 fixed air core inductor -55C~155C 15MHz 23mOhm Max 5.6muH RoHS : Compliant |
| 0 | ||
| SRF1010DA-R43M | Bourns Inc | ROHS3Compliant Wirewound Active e3 Fixed Inductor -55C~155C 60MHz 2.3mOhm Max 430nH RoHS : Compliant |
| 0 | ||
| SRF1010DA-7R5M | Bourns Inc | ROHS3Compliant Wirewound Active e3 fixed air core inductor -55C~155C 14MHz 28mOhm Max 7.5muH RoHS : Compliant |
| 0 | ||
![]() Vyrian | IRF1010EZSTRLP![]() | Infineon Technologies AG | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS : Compliant | 13,362 | ||
| MBRF10100CT-JT | Diodes Incorporated | Rectifier Diode, Schottky, 1 Phase, 2 Element, 5A, 100V V(RRM), Silicon, TO-220AB | 10,055 | |||
![]() Win Source Electronics | IRF1010NSTRR | Infineon Technologies AG | MOSFET N-CH 55V 85A D2PAK |
| 25,613 | |
| MBRF10100CT | SMC Diode Solutions | 10 Amp Schottky Barrier Rectifier 20 to 100 Volts | DIODE ARRAY SCHOTTKY 100V ITO220 |
| 18,196 | ||
IRF1010E![]() | International Rectifier | Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A⑦ RoHS : Not Compliant |
| 16,973 | ||
| IRF1010EPBF | Infineon Technologies AG | MOSFET N-CH 60V 84A TO-220AB RoHS : Compliant |
| 15,580 | ||
| IRF1010NSTRLPBF | Infineon Technologies AG | MOSFET N-CH 55V 85A D2PAK RoHS : Compliant |
| 14,138 | ||
IRF1010N![]() | International Rectifier | Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A⑦) RoHS : Not Compliant |
| 12,285 | ||
| IRF1010NSTRL | Infineon Technologies AG | MOSFET N-CH 55V 85A D2PAK |
| 8,016 | ||
| IRF1010ES | International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A⑦) RoHS : Not Compliant |
| 7,000 | ||
| IRF1010ESTRLPBF | Infineon Technologies AG | MOSFET N-CH 60V 84A D2PAK RoHS : Compliant |
| 6,660 | ||
| IRF1010EZPBF | Infineon Technologies AG | Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 60V 75A TO-220AB RoHS : Compliant |
| 6,591 | ||
| IRF1010ESPBF | Infineon Technologies AG | HEXFET Power MOSFET |
| 6,460 | ||
| IRF1010NSTRRPBF | Infineon Technologies AG | Trans MOSFET N-CH Si 55V 85A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 55V 85A D2PAK RoHS : Compliant |
| 4,130 | ||
| IRF1010EZ | Infineon Technologies AG | AUTOMOTIVE MOSFET | MOSFET N-CH 60V 75A TO-220AB RoHS : Not Compliant |
| 1,780 | ||
| IRF1010NPBF | Infineon Technologies AG | MOSFET N-CH 55V 85A TO-220AB RoHS : Compliant |
| 81 |
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