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GS66508B Distributor
DistributorPart #ManufacturerDescriptionPriceQty.
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Avnet Americas		GS66508BMRXUSA1

 Infineon Technologies AG Gallium Nitride (GaN) Transistor, 650 V, 30 A, 0.063 ohm, 6.1 nC, GaNPX, Surface Mount - Tape and Reel (Alt: GS66508BMRXUSA1)
RoHS : Compliant
0
GS66508BTRXUMA1

 Infineon Technologies AG Gallium Nitride (GaN) Transistor, 650 V, 30 A, 0.063 ohm, 6.1 nC, GaNPX, Surface Mount - Tape and Reel (Alt: GS66508BTRXUMA1)
RoHS : Compliant
0

Rochester Electronics		GS66508BMRXUSA1

 Infineon Technologies AG MOSFET N-Channel 650V 30A (Tc) 4-SMD, Right Angle
RoHS : Compliant
22,250
GS66508BTRXUMA1

 Infineon Technologies AG MOSFET N-Channel 650V 4-SMD, Right Angle T/R
RoHS : Compliant
8,553

Chip 1 Exchange		GS66508B-E01-MR

 GAN INSTOCK
120

Vyrian		GS66508B-E01-MR

 Gan Systems Power Field-Effect Transistor, 30A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
795
GS66508B-TR

 Gan Systems Power Field-Effect Transistor, 30A I(D), 650V, 0.063ohm, 1-Element, N-Channel, Gallium Nitride, High Electron Mobility FET
761

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