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FD400R2V Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() TME | FD400R12KE3HOSA1 | Infineon Technologies AG | Module: IGBT; 62MM; 2kW; Field Stop,Trench RoHS : Compliant |
| 0 | |
| FD400R12KE3B5HOSA1 | Infineon Technologies AG | Module: IGBT; Ic: 580A; 62MM; 2kW; Field Stop,Trench; screw RoHS : Compliant |
| 0 | ||
![]() Avnet Americas | FD400R12KE3B5HOSA1 | Infineon Technologies AG | - Trays (Alt: FD400R12KE3B5HOSA1) RoHS : Compliant | 300 | ||
| FD400R12KE3HOSA1 | Infineon Technologies AG | - Trays (Alt: FD400R12KE3HOSA1) RoHS : Compliant |
| 0 | ||
| FD400R12KE3B5HOSA1 | Infineon Technologies AG | - Trays (Alt: FD400R12KE3B5HOSA1) RoHS : Compliant |
| 0 | ||
| MTSW-104-09-F-D-400-RA | Samtec Inc | Pin Header, Board-to-Board, 2 Rows, 8 Contacts, Through Hole, MTSW Series, Unshrouded, Right Angle - Bulk (Alt: MTSW-104-09-F-D-400-RA) RoHS : Compliant |
| 0 | ||
![]() Newark | FD400R12KE3HOSA1 | Infineon Technologies AG | Igbt Module, 1.2Kv, 580A, Single Chopper; |Infineon Technologies FD400R12KE3HOSA1 RoHS : Compliant |
| 4 | |
| MTSW-104-09-F-D-400-RA | Samtec Inc | Pin Header, Mtsw-104-09-F-D-400-Ra; |Samtec, Inc. MTSW-104-09-F-D-400-RA RoHS : Compliant |
| 0 | ||
![]() Rochester Electronics | FD400R12KE3HOSA1 | Infineon Technologies AG | IGBT MOD 1.2kV 580A 2kW Module Tray RoHS : Compliant |
| 16 | |
| FD400R12KE3B5HOSA1 | Infineon Technologies AG | IGBT MOD 1.2kV 580A 2kW Module Tray RoHS : Compliant |
| 56 | ||
| FD400R16KF4 | Infineon Technologies AG | Insulated Gate Bipolar Transistor Module RoHS : Not Compliant |
| 26 | ||
| FD400R07PE4RB6BOSA1 | Infineon Technologies AG | IGBT Module RoHS : Compliant |
| 267 | ||
| FD400R33KF2CKNOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel RoHS : Not Compliant |
| 105 | ||
| FD400R33KF2CNOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel RoHS : Not Compliant |
| 115 | ||
| FD400R12KE3B5HOSA1 | International Rectifier | IGBT MOD 1.2kV 580A 2kW Module Tray RoHS : Compliant |
| 340 | ||
![]() Sager | HMTSW-108-09-F-D-400-RA | Samtec Inc | Headers & Wire Housings RoHS : Compliant | 0 | ||
| MTSW-106-09-F-D-400-RA | Samtec Inc | Headers & Wire Housings RoHS : Compliant | 0 | |||
| HMTSW-104-09-F-D-400-RA | Samtec Inc | Headers & Wire Housings RoHS : Compliant | 0 | |||
| MTSW-104-09-F-D-400-RA | Samtec Inc | Headers & Wire Housings Variable Height PCB Header Strips, 0.100 pitch RoHS : Compliant |
| 0 | ||
![]() ComSIT USA | FD400R12KE3 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 7 | ||
![]() EBV Elektronik | FD400R12KE3HOSA1 | Infineon Technologies AG | IGBT Module Single Chopper 580 A 17 V 2 kW 125 C Module (Alt: SP000092023) RoHS : Compliant | 0 | ||
| FD400R12KE3B5HOSA1 | Infineon Technologies AG | (Alt: SP000092010) RoHS : Compliant | 0 | |||
| FD400R07PE4RB6BOSA1 | Infineon Technologies AG | IGBTs (Alt: SP000986090) RoHS : Compliant | 0 | |||
![]() Master Electronics | HMTSW-108-09-F-D-400-RA | Samtec Inc | .100 High-Temp Variable Post Height Terminal Strip RoHS : Compliant |
| 0 | |
| MTSW-120-09-F-D-400-RA | Samtec Inc | RoHS : Compliant |
| 0 | ||
| MTSW-102-09-F-D-400-RA | Samtec Inc | RoHS : Compliant |
| 0 | ||
| MTSW-106-09-F-D-400-RA | Samtec Inc | .100 Variable Post Height Terminal Strip RoHS : Compliant |
| 0 | ||
| MTSW-110-09-F-D-400-RA | Samtec Inc | RoHS : Compliant |
| 0 | ||
| HMTSW-104-09-F-D-400-RA | Samtec Inc | .100 High-Temp Variable Post Height Terminal Strip RoHS : Compliant |
| 0 | ||
| MTSW-104-09-F-D-400-RA | Samtec Inc | .100 Variable Post Height Terminal Strip RoHS : Compliant |
| 0 | ||
| MTSW-106-10-F-D-400-RA | Samtec Inc | RoHS : Compliant |
| 0 | ||
![]() Vyrian | FD400R12KE3B5HOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 1,950 | ||
| FD400R12KE3HOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 580A I(C), 1200V V(BR)CES, N-Channel RoHS : Compliant | 1,150 | |||
| FD400R33KF2CKNOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel RoHS : Not Compliant | 380 | |||
| FD400R33KF2CNOSA1 | Infineon Technologies AG | Insulated Gate Bipolar Transistor, 660A I(C), 3300V V(BR)CES, N-Channel RoHS : Not Compliant | 330 |
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