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BSP320 Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() DigiKey | BSP320SL6433 | Rochester Electronics LLC | SMALL-SIGNAL N-CHANNEL MOSFET |
| 5,433 | |
| BSP3-208/240-LC | Thomas Research Products | SPD 275VAC/350VDC MCOV 3 POLE |
| 8 | ||
| BSP3-208/240 | Thomas Research Products | SPD 275VAC/350VDC MCOV 3 POLE |
| 0 | ||
| BSP320S E6433 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 |
| 0 | ||
| BSP320S E6327 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 | 0 | |||
| BSP320SL6433HTMA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 | 0 | |||
| BSP320SH6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 RoHS : Compliant |
| 0 | ||
| BSP320SH6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 RoHS : Compliant |
| 0 | ||
| BSP320SH6327XTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 RoHS : Compliant | 0 | |||
| BSP320SH6433XTMA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223 |
| 0 | ||
| BSP320SL6327HTSA1 | Infineon Technologies AG | MOSFET N-CH 60V 2.9A SOT223-4 | 0 | |||
![]() Verical | BSP320SL6327HTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS : Compliant |
| 53,000 | |
| BSP320SH6327XTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS : Compliant |
| 5,519 | ||
| BSP320SH6327XTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS : Compliant |
| 5,150 | ||
| BSP320SH6433XTMA1 | Infineon Technologies AG | Small Signal Transistor |
| 4,000 | ||
| BSP320SL6327HTSA1 | Infineon Technologies AG | Trans MOSFET N-CH 60V 2.9A Automotive 4-Pin(3+Tab) SOT-223 T/R RoHS : Compliant |
| 1,875 | ||
| BSP320S L6433 | Infineon Technologies AG | Trans MOSFET N-CH 60V 2.9A 4-Pin(3+Tab) SOT-223 T/R Automotive AEC-Q101 RoHS : Compliant |
| 1,496 | ||
![]() Newark | BSP320SH6327XTSA1 | Infineon Technologies AG | MOSFET, N-CH, 60V, 2.9A, 150DEG C, 1.8W; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes RoHS : Compliant | 0 | ||
| BSP320SH6327XTSA1 | Infineon Technologies AG | MOSFET, N-CH, 60V, 2.9A, SOT-223 ROHS COMPLIANT: YES RoHS : Compliant | 0 | |||
![]() RS | BSP 320 1.20M | TE Connectivity | RAYCHEM, CGPT POLYOLEFIN HEATSHRINK 3.2MM BLACK |
| 0 | |
| BSP 320 / 1.2M | TE Connectivity | RAYCHEM, CGPT POLYOLEFIN HEATSHRINK 3.2MM CLEAR |
| 0 | ||
![]() Rochester Electronics | BSP320SH6327XTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 10,669 | |
| BSP320SH6433XTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 4,000 | ||
| BSP320SL6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 54,900 | ||
| BSP320SL6433 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant |
| 5,433 | ||
![]() ComSIT USA | BSP320SH6327 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 990 | ||
| BSP320SL6327 | Infineon Technologies AG | SIPMOS SMALL-SIGNAL-TRANSISTOR Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS : Compliant | 590 | |||
![]() Chip 1 Exchange | BSP320SH6327XTSA1 | Infineon Technologies AG | INSTOCK RoHS : Compliant | 5,446 | ||
![]() Vyrian | BSP320SL6433HTMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,385 | ||
| BSP320SL6327HTSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,979 | |||
| BSP320SH6327XTSA1/SAMPLE | Infineon Technologies AG | Power Field-Effect Transistor | 739 |
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