| Electronic Components Datasheet Search |
|
65R950 Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() TME | IPS65R950C6AKMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 4.5A; 37W; IPAK SL RoHS : Compliant |
| 0 | |
IPD65R950CFDBTMA1![]() | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 RoHS : Compliant |
| 0 | ||
| IPD65R950CFDATMA2 | Infineon Technologies AG | Transistor: N-MOSFET; 650V; 3.9A; 36.7W; DPAK RoHS : Compliant |
| 0 | ||
| IPD65R950CFDATMA1 | Infineon Technologies AG | Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 RoHS : Compliant |
| 0 | ||
![]() Avnet Americas | IPD65R950CFDATMA2 | Infineon Technologies AG | Trans MOSFET N-CH 80V 3.9A 3-Pin TO-252 T/R - Tape and Reel (Alt: IPD65R950CFDATMA2) RoHS : Compliant | 0 | ||
![]() Rochester Electronics | IPD65R950C6ATMA1 | Infineon Technologies AG | MOSFET N-Channel 650V 4.5A (Tc) TO-252-3 T/R RoHS : Compliant |
| 10,787 | |
| IPS65R950C6AKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 4.5A I(D), 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant |
| 489,900 | ||
![]() Avnet Silica | WSJM65R950SJ | WeEn Semiconductor Co Ltd | (Alt: WSJM65R950SJ) RoHS : Compliant | 0 | ||
![]() EBV Elektronik | IPD65R950CFDATMA2 | Infineon Technologies AG | Trans MOSFET NCH 80V 39A 3Pin TO252 TR (Alt: SP001977060) RoHS : Compliant | 12,500 | ||
![]() Vyrian | IPD65R950CFDATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 3.9A I(D), 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 13,216 | ||
| IPS65R950C6AKMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 4.5A I(D), 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 RoHS : Compliant | 12,590 | |||
IPD65R950CFDBTMA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 3.9A I(D), 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 11,215 | |||
| IPD65R950C6ATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 650V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS : Compliant | 3,911 |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved짤Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |