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07N65 Distributor |
| Distributor | Part # | Manufacturer | Description | Price | Qty. BuyNow | |
![]() Avnet Americas | TW107N65C,S1F | Toshiba America Electronic Components | - Rail/Tube (Alt: TW107N65C,S1F) RoHS : Compliant |
| 0 | |
![]() Mouser Electronics | TW107N65C,S1F | Toshiba America Electronic Components | SiC MOSFETs G3 650V SiC-MOSFET TO-247 107mohm RoHS : Compliant |
| 19 | |
![]() Newark | HMF07N65S | SPC Multicomp | Mosfet, N-Ch, 650V, 7A, To-220F; |Multicomp Pro HMF07N65S RoHS : Compliant |
| 4,853 | |
| TW107N65C,S1F(S | Toshiba America Electronic Components | Mosfet, N-Ch, 650V, 20A, To-247; Available Until Stocks Are Exhausted |Toshiba TW107N65C, S1F(S RoHS : Compliant |
| 32 | ||
![]() Rochester Electronics | 74HCT107N,652![]() | NXP Semiconductors | J-K Flip-Flop, HCT Series, 2-Func, Negative Edge Triggered, 2-Bit, Complementary Output, CMOS, PDIP14 RoHS : Compliant |
| 8,047 | |
SPI07N65C3XKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS : Compliant |
| 23,000 | ||
SPA07N65C3XKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant |
| 203 | ||
| SPP07N65C3XKSA1 | Infineon Technologies AG | SPP07N65 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS : Compliant | 482 | |||
![]() TME | WMF07N65C4 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; SJMOS™ C4; unipolar; 650V; SOT223 |
| 1,795 | |
| WMK07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO220-3 |
| 447 | ||
| WMO07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252 |
| 164 | ||
| WMN07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO262 |
| 0 | ||
| WMH07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S2 |
| 0 | ||
| WML07N65C4 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 23W |
| 0 | ||
| WMG07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO251S3 |
| 0 | ||
| WMO07N65C4 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W |
| 0 | ||
| WMM07N65C2 | Cyg Wayon Circuit Protection Co Ltd | Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO263 |
| 0 | ||
![]() Richardson RFPD | WMO07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | ||
| WMH07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WMG07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WMN07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WML07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WMF07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WMP07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
| WMK07N65C2 | Cyg Wayon Circuit Protection Co Ltd | 650V 1.0Ohm Super Junction Power MOSFET RoHS : Compliant | 0 | |||
| WMM07N65C2 | Cyg Wayon Circuit Protection Co Ltd | PWRMOSFET TRANSISTOR RoHS : Compliant | 0 | |||
![]() EBV Elektronik | TW107N65C,S1F(S | Toshiba America Electronic Components | (Alt: TW107N65C,S1F(S) RoHS : Compliant | 90 | ||
![]() Maritex | SK07N65B | Shikues Semiconductor | MOSFETs; SK07N65B; SHIKUES RoHS : Unknown |
| 2,500 | |
![]() Vyrian | SPP07N65C3HKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 12,627 | ||
| SPI07N65C3HKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.0006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 11,339 | |||
74HCT107N,652![]() | NXP Semiconductors | J-K Flip-Flop, HCT Series, 2-Func, Negative Edge Triggered, 2-Bit, Complementary Output, CMOS, PDIP14 RoHS : Compliant | 7,189 | |||
| SPP07N65C3XKSA1 | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 6,692 | |||
SPA07N65C3XKSA1![]() | Infineon Technologies AG | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS : Compliant | 4,488 | |||
74HC107N,652![]() | NXP Semiconductors | J-K Flip-Flop, HC/UH Series, 2-Func, Negative Edge Triggered, 2-Bit, Complementary Output, CMOS, PDIP14 RoHS : Compliant | 3,924 |
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